Accession Number : ADA306398

Title :   Kinetics of Growth Phenomena at Semiconductor Surfaces.

Descriptive Note : Final technical rept. 1 Nov 91-31 Oct 95,

Corporate Author : CALIFORNIA UNIV SANTA BARBARA DEPT OF CHEMISTRY

Personal Author(s) : Metiu, Horia

PDF Url : ADA306398

Report Date : 19 MAR 1996

Pagination or Media Count : 13

Abstract : Our research is directed towards understanding the processes taking place during epitaxial growth of solid surfaces, with a view to potential control of growth. We use computer simulations and, when possible, simple models that are tested by simulations and by comparison with experiments. Issues include movement of atoms and of vacancies; nucleation processes, aggregation, and density; and the evolution of island shape. To take one example, we have studied, using theoretical modeling and simulations, early growth processes in Si(100), and predicted a complex scenario for the early growth, including a prediction that, under certain conditions, dimers will rotate, performing jumps of 90 degrees. These predictions have been confirmed by low temperature STM experiments that we helped design, as well as by independent measurements.

Descriptors :   *EPITAXIAL GROWTH, *SILICON, COMPUTERIZED SIMULATION, CONTROL, MEASUREMENT, LOW TEMPERATURE, THEORY, SEMICONDUCTORS, NUCLEATION, MONTE CARLO METHOD, SURFACES.

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE