Accession Number : ADA306437
Title : Research on Laser Damage Threshold of Photoelectric Detectors,
Corporate Author : NATIONAL AIR INTELLIGENCE CENTER WRIGHT-PATTERSON AFB OH
Personal Author(s) : Dezhang, Chen ; Chengquan, Zhang
PDF Url : ADA306437
Report Date : 13 FEB 1996
Pagination or Media Count : 14
Abstract : The perpetual laser damage effects of silicon PIN photoelectric diodes and silicon avalanche photodiodes irradiated by a laser of 1. O6um or 0.53um wavelength are studied. The laser damage thresholds of the detectors are experimentally measured. The main reason of causing the perpetual damage are the laser heat singe on the PN connect of photoelectric diodes. The damage thresholds are relative to the laser wavelength, pulse width and the photodiod structure.
Descriptors : *PIN DIODES, *LASER DAMAGE, *AVALANCHE DIODES, THRESHOLD EFFECTS, LASER BEAMS, SILICON, TRANSLATIONS, HEAT, CHINA, CHINESE LANGUAGE, PHOTOELECTRICITY, PHOTOELECTRIC MATERIALS.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE