Accession Number : ADA306467
Title : Research on Laser-Damage Threshold of Photoelectric Detectors,
Corporate Author : NATIONAL AIR INTELLIGENCE CENTER WRIGHT-PATTERSON AFB OH
Personal Author(s) : Dezhang, Chen ; Quan, Zhang C.
PDF Url : ADA306467
Report Date : 21 MAR 1996
Pagination or Media Count : 16
Abstract : Permanent laser-damage effects in silicon PIN photoelectric diodes and silicon avalanche photodiodes irradiated with a l.06 micrometer or an 0.53 micrometer laser are studied. The laser-damage thresholds of the detectors are experimentally measured. The mean reason for causing permanent damage includes latent heat scorching at the PN junction of the photoelectric diodes. The damage thresholds are dependent on wavelength, pulse duration, and photodiode structure.
Descriptors : *PHOTODETECTORS, *LASER DAMAGE, THRESHOLD EFFECTS, SILICON, TRANSLATIONS, IRRADIATION, PHOTODIODES, PIN DIODES, CHINA, CHINESE LANGUAGE, PHOTOELECTRICITY, AVALANCHE DIODES.
Subject Categories : Lasers and Masers
Optical Detection and Detectors
Distribution Statement : APPROVED FOR PUBLIC RELEASE