Accession Number : ADA306480
Title : Damage Mechanism of InSb Detectors (PV) When Laser-Irradiated,
Corporate Author : NATIONAL AIR INTELLIGENCE CENTER WRIGHT-PATTERSON AFB OH
Personal Author(s) : Zhiping, Jiang ; Qisheng, Lu
PDF Url : ADA306480
Report Date : 14 MAR 1996
Pagination or Media Count : 13
Abstract : The damage mechanisms of InSb detectors (PV) when laser-irradiated are investigated. It is pointed out that the laser damage degrades the p-n junction locally, which has effects similar to those of a parallel resistance on device performance. Various experimental phenomena are explained. The calculated values closely fit the experimental data. This model can also explain the 'flash' effects, i.e., the InSb (PV) detector may have better performance after irradiation with intense light.
Descriptors : *DAMAGE, *IRRADIATION, *INDIUM ANTIMONIDES, *LASER DAMAGE, EXPERIMENTAL DATA, DETECTORS, RESISTANCE, INTENSITY, LIGHT, TRANSLATIONS, N TYPE SEMICONDUCTORS, PARALLEL ORIENTATION, CHINA, P TYPE SEMICONDUCTORS, CHINESE LANGUAGE, FLASHES.
Subject Categories : Optics
Electrical and Electronic Equipment
Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE