Accession Number : ADA306493

Title :   IR Materials Producibility.

Descriptive Note : Quarterly technical rept. no. 7, 1 Feb-30 Apr 94,

Corporate Author : SRI INTERNATIONAL MENLO PARK CA

Personal Author(s) : Sher, A. ; Berding, M. A. ; Paxton, A. T. ; Muller, M.

PDF Url : ADA306493

Report Date : 03 JUN 1994

Pagination or Media Count : 12

Abstract : The formation energy for mercury vacancy - tellurium antisite pairs is calculated. We developed a method for calculating the ionization energies of the defects in semiconductors. The electron-phonon interaction-induced band-edge shifts in semiconductors are calculated using accurate band structures. The temperature variation of gaps in GaAs (done to validate our method) and Hg(0.78)Cd(0.22)Te have been calculated and are found to agree well with experiments.

Descriptors :   *ELECTROOPTICS, *PHOTONICS, *INFRARED DETECTORS, *INFRARED OPTICAL MATERIALS, GALLIUM ARSENIDES, SEMICONDUCTORS, POINT DEFECTS, IONIZATION, FOCAL PLANES, MERCURY CADMIUM TELLURIDES, TELLURIUM.

Subject Categories : Electrooptical and Optoelectronic Devices
      Infrared Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE