Accession Number : ADA306636

Title :   Analysis and Characterization of GaN Based Materials and Devices.

Descriptive Note : Semi-annual technical rept. 1 Feb-31 Jul 95,

Corporate Author : VIRGINIA UNIV CHARLOTTESVILLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Shur, Michael ; Money, John M.

PDF Url : ADA306636

Report Date : AUG 1995

Pagination or Media Count : 5

Abstract : We calculated the elastic strain relaxation in wurtzite GaN-AlN-GaN semiconductor-insulator-semiconductor (SIS structures, Elastic strain tensor components, elastic energy, the density of the misfit dislocations, and the other parameters of the system were obtained as functions of the AlN layer thickness). Theoretical values of the elastic strain relaxation are in satisfactory agreement with experimental data extracted from capacitance voltage characteristics of GaN-AlN-GaN SIS structures. p2

Descriptors :   *ELASTIC PROPERTIES, *SEMICONDUCTORS, *NITRIDES, *ALUMINUM, *GALLIUM, DENSITY, THICKNESS, EXPERIMENTAL DATA, LAYERS, MATERIALS, COMPOSITE MATERIALS, INSULATION, ENERGY, VOLTAGE, STRAIN(MECHANICS), DISLOCATIONS, RELAXATION, TENSORS, CAPACITANCE.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Electrical and Electronic Equipment
      Mechanics

Distribution Statement : APPROVED FOR PUBLIC RELEASE