Accession Number : ADA306965

Title :   Selective Etching of Silicon for Selective Area Epitaxial Growth.

Descriptive Note : Final rept. Jun 92-May 94,

Corporate Author : ARMY RESEARCH LAB FORT BELVOIR VA

Personal Author(s) : Advena, Donna J. ; Dinan, John H.

PDF Url : ADA306965

Report Date : APR 1996

Pagination or Media Count : 16

Abstract : Process conditions are described for selectively etching silicon by wet and dry etching techniques. High etch rates are achieved and a selectivity (etch rate of silicon/etch rate of masking material) as high as 600 is obtained when thermal oxide is used as a mask and SF6 as the gas in a reactive ion etcher at high pressure. Dry etch process parameters are optimized to produce undercut edge profiles and smooth silicon floors, both of which are necessary to accommodate the growth of epitaxial material in recesses. p4

Descriptors :   *EPITAXIAL GROWTH, *ETCHING, *SILICON, METHODOLOGY, HIGH RATE, PARAMETERS, MATERIALS, EDGES, FLOORS, HIGH PRESSURE, MOISTURE CONTENT, PROFILES, OXIDES, THERMOCHEMISTRY, LOW LEVEL, DRY MATERIALS, MASKING.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Metallurgy and Metallography
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE