Accession Number : ADA307139
Title : Si Wires in SOI Configuration.
Descriptive Note : Final rept. 1 Jun 95-29 Feb 96,
Corporate Author : GRATINGS INC ALBUQUERQUE NM
Personal Author(s) : Zaidi, Saleem H.
PDF Url : ADA307139
Report Date : 18 MAR 1996
Pagination or Media Count : 34
Abstract : Si is a poor luminescent material in comparison with direct bandgap semiconductors such as GaAs, or InP. Thus, the room temperature photoluminescence (PL) from porous Si (pi-Si) has attracted a great deal of attraction (1). Although Pickering et al. (2) had previously reported on PL from pi-Si attributing it to a complex mixture of phases, i.e., alpha-Si:O (and/or alpha-Si:H), the interpretation by Canham and Lehman et al. (3) in terms of quantum-confinement effects has stimulated intense research efforts aimed at a comprehensive understanding of the underlying physical mechanisms. To date, however, a clear picture has yet to emerge.
Descriptors : *SILICON, *SILICON ON INSULATOR, PHYSICAL PROPERTIES, MATERIALS, QUANTUM THEORY, WIRE, GALLIUM ARSENIDES, PHOTOLUMINESCENCE, INTENSITY, FABRICATION, SEMICONDUCTORS, ELECTRICAL PROPERTIES, PHASE, ROOM TEMPERATURE, MIXTURES, CONFIGURATIONS, INDIUM PHOSPHIDES, LUMINESCENCE, RAMAN SPECTRA.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE