Accession Number : ADA307177
Title : Diffusion-Bonded Nonlinear Materials for Practical Quasi-Phase-Matched Mid-IR Devices.
Descriptive Note : Final technical rept. 1 Dec 93-30 Sep 95,
Corporate Author : STANFORD UNIV CA EDWARD L GINZTON LAB OF PHYSICS
Personal Author(s) : Byer, Robert L.
PDF Url : ADA307177
Report Date : APR 1996
Pagination or Media Count : 63
Abstract : This report summarizes research on the application of diffusion bonded GaAs for high power quasiphase matched nonlinear frequency conversion in the infrared (IR). Research focused on development of material processing methods. Microstructural, microchemical and optical characterization techniques were employed to analyze the nature of defects found at the wafer interfaces, and within the bulk material; strategies for minimizing them were developed. The resulting advances in processing technology reduced mid-IR optical losses in diffusion bonded GaAs stacks by over an order of magnitude, to less than 0.2% per interface. This is within the range required to make practical pulsed nonlinear infrared devices such as CO2 doublers. Further reductions in optical losses, required for high average power cw IR applications, appear possible.
Descriptors : *INFRARED OPTICAL MATERIALS, *FREQUENCY CONVERSION, HIGH POWER, METHODOLOGY, OPTICAL PROPERTIES, GALLIUM ARSENIDES, DIFFUSION BONDING, NONLINEAR SYSTEMS, WAFERS, MATCHING, INFRARED EQUIPMENT, INFRARED PULSES.
Subject Categories : Optics
Distribution Statement : APPROVED FOR PUBLIC RELEASE