Accession Number : ADA307264

Title :   Electrical and Optical Characterization of Silicon Carbide-Polytypes with Respect to High-Field Device Applications.

Descriptive Note : Final technical rept.,

Corporate Author : ERLANGEN-NUERNBERG UNIV (GERMANY F R) INST FUER ANGEWANDTE PHYSIK

Personal Author(s) : Pensl, Gerhard

PDF Url : ADA307264

Report Date : FEB 1996

Pagination or Media Count : 12

Abstract : With regard to the purpose of this project focusing on the suitability of SiC for high field device applications, material properties like the degree of ionization of different shallow dopants (especially p-type dopants) at device operating temperatures, the possibility of impact ionization of intrinsic and extrinsic energetically deep defect centers as well as the high field carrier mobility of both electrons and holes had to be considered.

Descriptors :   *ELECTRIC FIELDS, *CARRIER MOBILITY, HIGH RATE, HOLES(ELECTRON DEFICIENCIES), ELECTRONS, GERMANY, IONIZATION, FOCUSING, DOPING, HIGH INTENSITY, SILICON CARBIDES, FIELD INTENSITY, P TYPE SEMICONDUCTORS.

Subject Categories : Electricity and Magnetism
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE