Accession Number : ADA307667

Title :   Characterization Equipment to Enhance Development of Group III Nitride. DURIP-94.

Descriptive Note : Final rept. 1 Dec 94-31 Dec 95,

Corporate Author : NEW MEXICO UNIV ALBUQUERQUE CENTER FOR HIGH TECHNOLOGY MATERIALS

Personal Author(s) : Hersee, Stephen D.

PDF Url : ADA307667

Report Date : 01 APR 1996

Pagination or Media Count : 7

Abstract : This equipment has played a vital role in our development of wide-gap GaN and related AlInGaN alloy semiconductors that are rapidly finding application in optoelectronic and high temperature devices. In particular, the high resolution X-ray diffractometer has enabled us to understand how the thin, low-temperature buffer layer, that is grown before the main III-N epilayer, controls the crystallinity of the epitaxial film. The 244 nm laser is being used as a pump laser for III-N materials and in combination with the XRD system is providing a rapid measure of alloy composition and crystal quality. These measurements are beginning to reveal important information concerning the stability of indium containing III-N alloys, that will have a major impact on heterostructure design.

Descriptors :   *NITRIDES, *GROUP III COMPOUNDS, LASER PUMPING, BUFFERS, MEASUREMENT, TEMPERATURE, LOW TEMPERATURE, STABILITY, IMPACT, ELECTROOPTICS, LAYERS, HIGH TEMPERATURE, X RAY DIFFRACTION, FILMS, EPITAXIAL GROWTH, CRYSTALS, SEMICONDUCTORS, ALLOYS, HIGH RESOLUTION, HETEROGENEITY, COMPOSITION(PROPERTY), INDIUM, DIFFRACTOMETERS.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Lasers and Masers
      Electrooptical and Optoelectronic Devices
      Atomic and Molecular Physics and Spectroscopy

Distribution Statement : APPROVED FOR PUBLIC RELEASE