Accession Number : ADA307741
Title : Ultrafast Phase Modulators and Semiconductor Laser Devices at 1.3 microns.
Descriptive Note : Final technical rept. Jan 94-Jan 95,
Corporate Author : ARIZONA UNIV TUCSON
Personal Author(s) : Peyghambarian, N.
PDF Url : ADA307741
Report Date : FEB 1996
Pagination or Media Count : 14
Abstract : A transmission up conversion system was built, which consisted of a tunable mode locked Ti: Sapphire laser and a tunable continuous wave Cr:Forsterite laser. The system has 100 femtosecond time resolution near 1/3micrometer wavelength, limited only by the mode locked Ti:Sapphire laser pulse width. With the transmission up conversion system, we observed 5 picosecond carrier capture time in GaInAlAs (11nm)/InAlAs multiple quantum wells (MQWs) at 77K. The continuous wave Cr:Forsterite laser was also used to measure the phase modulation by a current. The maximum 5 pi phase shift was observed through the 200micrometer long InGaAs/InAlAs MQW laser diode.
Descriptors : *PHASE MODULATION, *MODE LOCKED LASERS, GALLIUM ARSENIDES, CONTINUOUS WAVES, PULSE RATE, SAPPHIRE, TUNING, TITANIUM, ALUMINUM ARSENIDES, PHASE SHIFT, FREQUENCY MULTIPLIERS, DIODE LASERS.
Subject Categories : Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE