Accession Number : ADA307787
Title : Superior Photoengraving Process for Semiconductor Devices.
Descriptive Note : Contract rept.,
Corporate Author : WESTINGHOUSE ELECTRIC CORP BALTIMORE MD
Personal Author(s) : Taylor, C. J.
PDF Url : ADA307787
Report Date : SEP 1966
Pagination or Media Count : 40
Abstract : An investigation of the preparation of a silicon wafer surface prior to the application of photoresist to improve the resist adhesion is reported. Several process variations for obtaining oxide surfaces are investigated and correlated with resist adhesion. Methods of mechanically and chemically conditioning the oxide-passivated surface of the wafer to improve the adhesion of resist are investigated. The effects of varying the resist coating thickness and the use of various chelating agents, wetting agents and surfactants to find a linkage to bond the open chain-end of the resist to the surface of the oxide are studied. Procedures are evolved, and those used in the testing program are described. In this report, the use of Kodak Metal Etch Resist as a silicon dioxide masking agent is investigated, and the effects of additives and of a new developer, as well as those of ambient variations are outlined and their importance described.
Descriptors : *SEMICONDUCTOR DEVICES, *PHOTOENGRAVING, THICKNESS, SILICON DIOXIDE, ADHESION, PHOTORESIST COATINGS, COATINGS, WETTING, OXIDES, SURFACE ACTIVE SUBSTANCES, ADDITIVES, BONDING, WAFERS, LINKAGES, MASKING, PHOTORESISTORS, CHELATING AGENTS.
Subject Categories : Electrical and Electronic Equipment
Printing and Graphic Arts
Distribution Statement : APPROVED FOR PUBLIC RELEASE