Accession Number : ADA307886
Title : The Properties of Thermally Passivated Si(1-x)Ge(x) Produced Using High Pressure Techniques.
Descriptive Note : Final technical rept.
Corporate Author : BROWN UNIV PROVIDENCE RI DIV OF ENGINEERING
PDF Url : ADA307886
Report Date : 1996
Pagination or Media Count : 21
Abstract : The focus of this work was the development of high pressure techniques for the electronic and chemical passivation of group IV alloy and compound semiconductor surfaces. The project goals were initially focussed on the use of ultra high pressure oxidation to produce high quality Si(1-x)Ge(x) MOS oxides and were expanded, via an ASSERT award, to include a study of the application of this technique to the oxidation of SiC. High pressure oxidation of Si(1-x)Ge(x) was explored using both high pressure wet (hydrothermal) and dry pure oxygen conditions. A process window was established where the compositionally congruent incorporation of Ge into the oxide was achieved and the kinetics of both wet and dry processes were established within this process window. The physical, chemical, and electrical properties of the resultant oxides were studied using a wide range of analytical techniques. The performance of the high pressure oxides were optimized using a nitride capping layer to reduce current leakage through the oxide. During the course of this research on the formation of high pressure Si(1-x)Ge(x)O2 we developed a new method for the synthesis of nanocrystalline Ge embedded in an SiO2 matrix. p1
Descriptors : *THERMAL PROPERTIES, *HIGH PRESSURE, *SEMICONDUCTORS, *SILICON, *GERMANIUM, ELECTRONICS, SYNTHESIS, CHEMICALS, LAYERS, SILICON DIOXIDE, ALLOYS, METAL OXIDE SEMICONDUCTORS, ELECTRICAL PROPERTIES, MOISTURE CONTENT, NITRIDES, SURFACES, OXYGEN, PURITY, OXIDATION, OXIDES, LOW LEVEL, GROUP IV COMPOUNDS, SILICON CARBIDES, PASSIVITY, CAPPING.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Properties of Metals and Alloys
Distribution Statement : APPROVED FOR PUBLIC RELEASE