Accession Number : ADA308361

Title :   Intelligent Processing of Ferroelectric Thin Films.

Descriptive Note : Final rept. 1 Jun 94-1 Aug 95,

Corporate Author : CLEMSON UNIV SC DEPT OF CERAMIC ENGINEERING

Personal Author(s) : Haertling, Gene H. ; Paradise, William

PDF Url : ADA308361

Report Date : 05 DEC 1995

Pagination or Media Count : 152

Abstract : This report details work that was performed at Clemson University over the fourth year of a four-year program involving intelligent processing of ferroelectric thin films. Since ferroelectric and electrooptic materials are known to possess properties that can vary widely due to form factor and processing method, studies were carried out by producing electrooptic thin films and bulk ceramics from the same acetate precursors via a liquid chemical MOD (metal organic decomposition) process and then characterizing their chemical, electrical, physical and electrooptic properties. It was desirable that a processing method compatible with both spin and dip-coated thin films as well as bulk ceramics made from coprecipitated powders be used in order to quantitatively compare their respective properties. The dielectric properties of electrooptic thin films were varied by mechanically altering the stresses placed upon the films. Comparisons were made among thin films under applied bending stresses of different magnitude. Properties measured were dielectric constant, saturation polarization, remanent polarization, coercive field and unit cell d-spacing.

Descriptors :   *ELECTROOPTICS, *PROCESSING, *THIN FILMS, *CERAMIC COATINGS, *CERAMIC MATERIALS, *FERROELECTRIC MATERIALS, OPTICAL PROPERTIES, POLARIZATION, POWDERS, ORGANOMETALLIC COMPOUNDS, PHOTONICS, ELECTRICAL PROPERTIES, BULK MATERIALS, DIELECTRIC PROPERTIES, LEAD TITANATES, LANTHANUM, ZIRCONATES, ACETATES, BENDING STRESS.

Subject Categories : Electrooptical and Optoelectronic Devices
      Ceramics, Refractories and Glass
      Coatings, Colorants and Finishes
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE