Accession Number : ADA308881
Title : Strain Characterization of AsH3 Induced Exchange Reactions in InP Grown by OMVPE.
Descriptive Note : Profession paper,
Corporate Author : NAVAL COMMAND CONTROL AND OCEAN SURVEILLANCE CENTER RDT AND E DIV SAN DIEGO CA
Personal Author(s) : Clawson, A. R. ; Hanson, C. M.
PDF Url : ADA308881
Report Date : APR 1996
Pagination or Media Count : 8
Abstract : Behavior of As-P intermixing in heterojunctions of As-compounds grown on InP (001) has been inferred from strain of very thin mis-matched layers inserted periodically in InP to form multilayer superlattice structures. Strain components are observed for both As-P exchange in the InP and from inserted layer growth. The data suggest that for As-compounds grown on an InP surface the availability of As for both layer growth and As-P exchange is rate-limited, most likely by surface kinetics, and an optimum growth rate occurs for minimizing the As-P exchange. There is also a fixed InAs strain component inherent to interfaces of As-compounds on InP. Monolayer thickness layers of AlP or GaP grown on the InP to change the surface chemical bonds are shown to reduce the As-P exchange somewhat but they do not stabilize the InP surface against exposure to AsH3. H2 and PH3-exposures of the As-terminated surface show that P-As exchange to desorb the As is slow compared to As adsorption on InP by AsH3 exposure.
Descriptors : *HYDRIDES, *EXCHANGE REACTIONS, *STRAIN(MECHANICS), *INDIUM PHOSPHIDES, *ARSENIC COMPOUNDS, REPRINTS, THICKNESS, OPTIMIZATION, LAYERS, ADSORPTION, GROWTH(GENERAL), CRYSTAL LATTICES, STRUCTURES, SUPERLATTICES, ORGANOMETALLIC COMPOUNDS, EPITAXIAL GROWTH, VAPOR PHASES, CHEMICAL BONDS, ALUMINUM, SURFACE CHEMISTRY, KINETICS, DESORPTION.
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE