Accession Number : ADA308965

Title :   Novel Engineered Compound Semiconductor Heterostructures for Advanced Electronic and Optoelectronic Integrated Circuit Applications.

Descriptive Note : Final rept.,

Corporate Author : ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Coleman, J. J. ; Holonyak, N., Jr. ; Stillman, G. E.

PDF Url : ADA308965

Report Date : 19 APR 1996

Pagination or Media Count : 12

Abstract : We have investigated novel semiconductor growth, materials, processes and devices. Gaseous source development for metalorganic molecular beam epitaxy (MOMBE) and metalorganic chemical vapor deposition (MOCVD) has been studied (Stillman). Silicon concentrations greater than 1 x 10(exp 19)/cu cm have been demonstrated using SiBr(4) by MOMBE and semi-insulating InP layers with resistivities greater than 1 x 10(exp 8) ohm-cm have been produced by using CCl(4) by MOCVD. High power and high perfomance semiconductor lasers and laser arrays have also been studied (Coleman). Several advanced processing techniques including reactive ion etching and e-beam lithography have been used to fabricate these lasers. In addition, the development of selective area epitaxy by MOCVD enables integration of lasers with electrical components for optoelectronic circuits on a single chip. Finally, use of inpurity induced layer disordering (IILD) and native oxides on high Al content compound semiconductors have been used to develop novel semiconductor laser devices (Holonyak). Microdisk lasers have been demonstrated using the IILD process to define curved geometry lasers. The native oxide has been used in vertical cavity surface emitting lasers VCSELs to define the current flow and to fabricate high-contrast distributed Bragg reflectors (DBRs).

Descriptors :   *ELECTROOPTICS, *SEMICONDUCTOR LASERS, *INTEGRATED CIRCUITS, *SEMICONDUCTOR DEVICES, HETEROJUNCTIONS, CHIPS(ELECTRONICS), ORGANOMETALLIC COMPOUNDS, CHEMICAL VAPOR DEPOSITION, EPITAXIAL GROWTH, ION BEAMS, LITHOGRAPHY, ELECTRON BEAMS, ELECTRICAL RESISTANCE, OPTICAL CIRCUITS, BRAGG ANGLE, MOLECULAR BEAM EPITAXY.

Subject Categories : Lasers and Masers
      Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE