Accession Number : ADA309010

Title :   Advanced Development of the Multi-Hundred Gigahertz Electro-Optic Modulator and Photodetector.

Descriptive Note : Final rept. 1 Jul 92-28 Feb 96,

Corporate Author : MICHIGAN UNIV ANN ARBOR CENTER FOR ULTRAFAST OPTICAL SCIENCE

Personal Author(s) : Nees, John A.

PDF Url : ADA309010

Report Date : 22 APR 1996

Pagination or Media Count : 13

Abstract : The project was established to develop materials and structures for modulation and detection of multi-hundred-GHz signals. During the period of three years we have fabricated and tested modulators using bulk GaAs and Si overgrowth on GaAs. We have also developed a probe sensitive to greater than 100 GHz signals with 100 nm spatial resolution. This probe has since been extended to a minimum detectable voltage sensitivity of a few nanovolts per square root hertz. We made high-speed measurements of photoconductive response in Er:GaAs showing it to have a carrier lifetime varying from 22 ps to 3.1 ps with doping from 10(exp 19)/cu cm to 10(exp 20)/cu cm. Finally, we made photoconductive sweep-generating switches for jitter free streak camera development.

Descriptors :   *ELECTROOPTICS, *PHOTODETECTORS, SPATIAL DISTRIBUTION, HIGH VELOCITY, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, VOLTAGE, SENSITIVITY, OPTICAL WAVEGUIDES, TELECOMMUNICATIONS, DOPING, MODULATORS, JITTER, STREAK CAMERAS.

Subject Categories : Electrooptical and Optoelectronic Devices
      Optical Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE