Accession Number : ADA309010
Title : Advanced Development of the Multi-Hundred Gigahertz Electro-Optic Modulator and Photodetector.
Descriptive Note : Final rept. 1 Jul 92-28 Feb 96,
Corporate Author : MICHIGAN UNIV ANN ARBOR CENTER FOR ULTRAFAST OPTICAL SCIENCE
Personal Author(s) : Nees, John A.
PDF Url : ADA309010
Report Date : 22 APR 1996
Pagination or Media Count : 13
Abstract : The project was established to develop materials and structures for modulation and detection of multi-hundred-GHz signals. During the period of three years we have fabricated and tested modulators using bulk GaAs and Si overgrowth on GaAs. We have also developed a probe sensitive to greater than 100 GHz signals with 100 nm spatial resolution. This probe has since been extended to a minimum detectable voltage sensitivity of a few nanovolts per square root hertz. We made high-speed measurements of photoconductive response in Er:GaAs showing it to have a carrier lifetime varying from 22 ps to 3.1 ps with doping from 10(exp 19)/cu cm to 10(exp 20)/cu cm. Finally, we made photoconductive sweep-generating switches for jitter free streak camera development.
Descriptors : *ELECTROOPTICS, *PHOTODETECTORS, SPATIAL DISTRIBUTION, HIGH VELOCITY, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, VOLTAGE, SENSITIVITY, OPTICAL WAVEGUIDES, TELECOMMUNICATIONS, DOPING, MODULATORS, JITTER, STREAK CAMERAS.
Subject Categories : Electrooptical and Optoelectronic Devices
Optical Detection and Detectors
Distribution Statement : APPROVED FOR PUBLIC RELEASE