Accession Number : ADA309268

Title :   Scanning Electron Microscope (SEM).

Descriptive Note : Final rept. Jun 95-Mar 96,

Corporate Author : NORTHWESTERN UNIV EVANSTON IL

Personal Author(s) : Razeghi, Manijeh

PDF Url : ADA309268

Report Date : JUN 1996

Pagination or Media Count : 5

Abstract : Since the arrival of the Scanning Electron Microscope (SEM), the Center for Quantum Devices was able to further improve progress in the development of high power laser diodes, long wavelength infrared detectors, midinfrared lasers (2-5 um), QWIPs, and further exploit GaN, AlN, and AlGaN films. The SEM system was utilized in diverse areas in the optoelectronics field. For instance, the system was used in the investigation of the buried ridge laser fabrication by monitoring the post etching surface roughness, detecting contamination, and induce defects along the mesa sidewalls during the processing and after regrowth of the confinement layer over the 1 um active region. One important factor important factor in the progress of the buried ridge lasers is the mesa height, orientation and dimension of the narrow 1 micrometer active region. The SEM was used to monitor the surface roughness, height, orientation and dimension of the mesa sidewalls. The SEM will further be used for MOPA's.

Descriptors :   *ELECTRON MICROSCOPES, *ELECTRONIC SCANNERS, ELECTROOPTICS, SURFACE ROUGHNESS, FABRICATION, ETCHING, NITRIDES, FAR INFRARED RADIATION, INFRARED LASERS, INFRARED DETECTORS, QUANTUM ELECTRONICS, CONFINEMENT(GENERAL), CONTAMINATION, LONG WAVELENGTHS, RIDGES, DIODE LASERS.

Subject Categories : Test Facilities, Equipment and Methods
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE