Accession Number : ADA309817
Title : A Study of a New Approach to Low Temperature Oxidation of Germanium Silicon Alloy Material and its Characterization.
Descriptive Note : Final rept. 1 Mar 92-29 Feb 96,
Corporate Author : LEHIGH UNIV BETHLEHEM PA
Personal Author(s) : Jaccodine, Ralph J. ; Young, Donald R.
PDF Url : ADA309817
Report Date : 04 JUN 1996
Pagination or Media Count : 202
Abstract : The study of the oxidation of Si-Ge alloys was successfully completed with the active collaboration of P.E. Thompson at the Naval Research Laboratory. A number of publications and talks resulted, in addition to two Ph.D. theses and one Master's degree. The work was accomplished as a three part study involving: (1) A UHV, XPS and AES study of the very early stage of oxidation (<10A). (2) A low temperature conventional (fluorine added) oxidation. (3) Electrical characterization by MOS technologies of implanted Ge. In Part 1, oxidations were carried out under ultra high vacuum conditions in a Scientia ESCA300. Under these conditions, a systematic study of suboxides formed in situ at low temperatures was made. Attention was given to the conditions under which all SiO2 or mixed SiO2-GeO2 resulted. In Part 2, chemically enhanced oxidation (by fluorine) was undertaken in the temperature range of 600 deg - 800 deg C. The chemically enhanced oxides at 600 deg C were found to be mixed SiO2-GeO2 oxides by XPS and SIMS measurements. Electrical characterization of these oxides was also carried out. In Part C, work was performed on the role of Ge at the SiO2 interface which resulted in obtaining understanding and quantification of implanted Ge and its role in hot carrier performance.
Descriptors : *LOW TEMPERATURE, *OXIDATION, *GERMANIUM ALLOYS, *SILICON ALLOYS, IONS, TEMPERATURE, MATERIALS, THESES, CHARGE CARRIERS, METAL OXIDE SEMICONDUCTORS, ELECTRICAL PROPERTIES, HIGH ENERGY, OXIDES, X RAY PHOTOELECTRON SPECTROSCOPY, FLUORINE, ULTRAHIGH VACUUM, MASS SPECTROMETRY.
Subject Categories : Inorganic Chemistry
Properties of Metals and Alloys
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE