Accession Number : ADA309913
Title : Atomic Layer Epitaxy of Advanced Devices and Circuits.
Descriptive Note : Final rept. 1988-1991,
Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH
Personal Author(s) : Bedair, S. M. ; Wissenman, ; Cooper, J.
PDF Url : ADA309913
Report Date : NOV 1991
Pagination or Media Count : 63
Abstract : For advanced electron devices, atomic layer epitaxy offers two capabilities which no other semiconductor growth technique provides: monolayer thickness control and conformal over-growth. Monolayer thickness control was used to ensure lateral and vertical uniformity for devices incorporating quantum wells and tunnel barriers, e.g. resonant tunneling diodes/over large area substrates. Conformal overgrowth was used for device passivation and in quantum well structures embedded in groves under sidewalls ALE was also used and showed definite advantages over other growth techniques in several other areas such as planar and carbon doping, high quality interfaces and selective area epitaxy. During the last three years we have addressed the major challenges facing the ALE technique, improved the material quality for both binary and ternary alloy III-V compounds and then applied the ALE technique to several device structures, such as Resonant tunneling diodes, planar doped FETs and Bipolar junction transistors.
Descriptors : *ELECTRONIC EQUIPMENT, *CIRCUITS, *ATOMIC LAYER EPITAXY, INTERFACES, LAYERS, MATERIALS, QUANTUM WELLS, TUNNELING(ELECTRONICS), EPITAXIAL GROWTH, SUBSTRATES, FIELD EFFECT TRANSISTORS, SEMICONDUCTOR DIODES, CARBON, ALLOYS, PLANAR STRUCTURES, RESONANCE, BARRIERS, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, QUANTUM ELECTRONICS, DOPING, TERNARY COMPOUNDS, BINARY ALLOYS, BIPOLAR TRANSISTORS, PASSIVITY, JUNCTION TRANSISTORS, CONFORMAL STRUCTURES.
Subject Categories : Electrical and Electronic Equipment
Properties of Metals and Alloys
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE