Accession Number : ADA310311

Title :   Optoelectronics Research Center.

Descriptive Note : Final technical rept. 1 Jul 92-31 Jan 96,

Corporate Author : NEW MEXICO UNIV ALBUQUERQUE

Personal Author(s) : Brueck, S. R.

PDF Url : ADA310311

Report Date : 12 JUN 1996

Pagination or Media Count : 7

Abstract : The AFOSR Optoelectronics Research Center at the University of New Mexico has continued its aggressive, broadly ranging program. Novel InGaAs and AlGaAs device structures such as resonant-periodic-gain surface-emitting lasers and high-power, coherent unstable resonator wide-stripe lasers have been pioneered. Processing advances have included investigation of III-V regrowth over patterned wafers allowing unique device structures such as unstable laser arrays, and the extension of interferometric lithography techniques has led to the definition of Si quantum wire and dot structures. Process technology improvements such as GaS passivation have extended the catastrophic optical breakdown limits of GaAs lasers. External cavity operation of diode lasers has provided information on internal device physics and on the fundamental limits of laser characteristics. Self-consistent thermal, electrical and optical modeling of both single-element and array geometries has led to improved device performance. A major advance is the coupling of phototransistors with surface-emitting lasers to make 'smart pixels.' Data rates for HBT/VCSEL switches as fast as 500 Mb/s have been demonstrated. Upconversion fiber lasers have been developed for the green (Er-doped ZBLAN) and blue (Tm-doped ZBLAN). Confocal photoluminescence spectroscopy has been developed as a simple, sub-micrometer spatial resolution tool for the study of regrown structures.

Descriptors :   *ELECTRONICS, *OPTICAL PROPERTIES, *ELECTROOPTICS, *GALLIUM ARSENIDE LASERS, *DIODE LASERS, CONVERSION, COUPLING(INTERACTION), FIBERS, MODELS, QUANTUM THEORY, WIRE, ALUMINUM GALLIUM ARSENIDES, PHOTOLUMINESCENCE, ARRAYS, RESEARCH FACILITIES, CAVITIES, LASERS, ELECTRICAL PROPERTIES, GASES, LITHOGRAPHY, INTERFEROMETRY, PHYSICS, SILICON, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, EXTERNAL, INDIUM, BIPOLAR TRANSISTORS, PASSIVITY, JUNCTION TRANSISTORS, PHOTOTRANSISTORS.

Subject Categories : Electrooptical and Optoelectronic Devices
      Inorganic Chemistry
      Lasers and Masers
      Atomic and Molecular Physics and Spectroscopy
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE