Accession Number : ADA310337

Title :   Investigation of Radiation Effects in Microelectronics.

Descriptive Note : Technical rept. 8 May 92-7 Nov 95,

Corporate Author : ARIZONA UNIV TUCSON DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Galloway, Kenneth F. ; Schrimpf, Ronald D. ; Johnson, Gregory H.

PDF Url : ADA310337

Report Date : JUN 1996

Pagination or Media Count : 320

Abstract : Electronic components implemented in space borne and military applications are often required to operate in a hostile radiation environment, and are therefore subject to the degradation and failure mechanisms associated with such environments. This report discusses radiation effects research in the areas of (1) single event burnout of power MOSFETs (2) single event gate rupture of power MOSFETs; (3) total dose degradation of power MOSFETs (including mobility degradation, cryogenic operation, 1/f noise, and termination structures); and (4) total-dose gain degradation of bipolar junction transistors. Experiment details and modeling and simulation results are given in these areas. This work is intended to (1) facilitate selection of appropriate components for radiation environments; (2) provide design techniques to improve the radiation hardness of power MOSFETs and bipolar junction transistors; and (3) advance the technical base with new physical insights in radiation effects in microelectronics.

Descriptors :   *MOSFET SEMICONDUCTORS, *RADIATION DAMAGE, SIMULATION, DEGRADATION, SPACE ENVIRONMENTS, ELECTRONIC EQUIPMENT, GATES(CIRCUITS), BURNOUT, MICROELECTRONICS, DOSAGE, MILITARY APPLICATIONS, CRYOGENICS, BIPOLAR TRANSISTORS, RADIATION HARDENING, JUNCTION TRANSISTORS, FAILURE(ELECTRONICS), SPACEBORNE.

Subject Categories : Nuclear Radiation Shield, Protection & Safety

Distribution Statement : APPROVED FOR PUBLIC RELEASE