Accession Number : ADA310635
Title : Visible Light Emitting Materials and Injection Devices.
Descriptive Note : Quarterly progress rept. 1 Mar-31 May 96,
Corporate Author : FLORIDA UNIV GAINESVILLE DEPT OF MATERIALS SCIENCE AND ENGINEERING
Personal Author(s) : Holloway, Paul H. ; Jones, Kevin ; Park, Robert ; Simmons, Joseph ; Abernathy, Cammy
PDF Url : ADA310635
Report Date : 31 MAY 1996
Pagination or Media Count : 54
Abstract : Progress in report on research into ZnSe-based and GaN-based materials and devices for light emitting diodes and diode lasers at blue-green visible wavelengths. II-VI Work. Our recent activities in the II-VI area have focused on stacking fault density reduction in ZnSe epilayers and the attached manuscript (see Appendix 1), which has been submitted to Applied Physics Letters (4/18/96), summarizes our recent results. This work is also supported in part by the II-VI Consortium. Further optimization of deposition parameters tor tne growth of cubic-GaN on MgO has resulted in the production of higher quality material as evidenced by the low-temperature PL spectrum shown in Fig. 1.1. As can be seen from the spectrum, a relatively sharp peak is dominant at 3.28 eV (at 21.5K). p1 and p4
Descriptors : *MATERIALS, *NITRIDES, *VISIBLE SPECTRA, *INJECTORS, *GALLIUM COMPOUNDS, *LIGHT EMITTING DIODES, *ZINC SELENIDES, FREQUENCY, DENSITY, PEAK VALUES, LOW TEMPERATURE, OPTIMIZATION, PRODUCTION, PHOTOLUMINESCENCE, REDUCTION, EMITTERS, BLUE(COLOR), STACKING, GREEN(COLOR), GROUP II-VI COMPOUNDS, FAULTS, SHARPNESS, MAGNESIUM OXIDES, DIODE LASERS.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE