Accession Number : ADA310727
Title : Intersubband Quantum Cascade Infrared Laser Development. Phase 1.
Descriptive Note : Final rept. Jun 95-Jul 96,
Corporate Author : QUANTUM EPITAXIAL DESIGNS INC BETHLEHEM PA
Personal Author(s) : Bacher, Kenneth L.
PDF Url : ADA310727
Report Date : 10 JUL 1996
Pagination or Media Count : 11
Abstract : The objectives of this program were threefold: to reproduce the quantum cascade laser results from Bell Labs in a production environment, to demonstrate the quantum cascade laser at longer wavelengths, and to extend the technology to the GaAs/AlGaAs material system in order to make the lasers easier to produce. After characterization with 5-crystal x-ray diffraction and photoluminescence to verify the material quality three laser wafers, with anticipated operating wavelengths near 4.5 microns and 8.5 microns, were grown, processed, and tested for this program. Although we were able to successfully grow the very thick lattice matched layers necessary for these devices, no lasing or electroluminescence was observed from any of the samples. Another laser design was produced based on the reported quantum cascade laser structures, but utilizing GaAs and AlGaAs materials instead of InGaAs and InAlAs; however, because of the negative results with the InGaAs/InAlAs structure and additional design uncertainties for the AlGaAs materials, this structure was not grown. This report will discuss in detail the work that was performed on the contract, possible cause for the negative results, and conclusions drawn from the work.
Descriptors : *INFRARED LASERS, *QUANTUM ELECTRONICS, *GALLIUM ARSENIDE LASERS, ELECTROLUMINESCENCE, ALUMINUM GALLIUM ARSENIDES, PHOTOLUMINESCENCE, X RAY DIFFRACTION, PUMPING(ELECTRONICS), CASCADE STRUCTURES, MOLECULAR BEAM EPITAXY.
Subject Categories : Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE