Accession Number : ADA310782
Title : Electrochemical Digital Etching: Atomic Level Studies of CdTe(100).
Descriptive Note : Technical rept. 1 Jun 95-31 May 96,
Corporate Author : GEORGIA UNIV ATHENS DEPT OF CHEMISTRY
Personal Author(s) : Sorenson, Tom A. ; Wilmer, Belinda K. ; Stickney, John L.
PDF Url : ADA310782
Report Date : 25 JUN 1996
Pagination or Media Count : 19
Abstract : Atomic level control in the etching of CdTe(100) is being investigated, in an attempt to develop an electrochemical digital etching procedure. In principle, surface atoms on the crystal should show higher reactivity than those contained on the interior, due to their decreased coordination. Electrochemical oxidation in 50 mM K2SO4, resulted in removal of the surface Cd atoms and a tellurium enriched surface, as observed by Auger electron spectroscopy. Subsequent reduction at -1.8V reduced the surface excess of Te, and returned the surface composition to stoichiometric. Selection of an appropriate potential for the oxidation of surface cadmium atoms was complicated by the observation that bulk CdTe is oxidized at potentials close to that used to oxidize the surface cadmium atoms.
Descriptors : *DIGITAL SYSTEMS, *ELECTROCHEMISTRY, *ETCHING, *CADMIUM, *TELLURIUM, CONTROL, REACTIVITIES, CRYSTALS, ATOMS, SURFACES, OXIDATION, SULFATES, AUGER ELECTRON SPECTROSCOPY, STOICHIOMETRY, ENRICHMENT, POTASSIUM, ATOMIC ENERGY LEVELS.
Subject Categories : Physical Chemistry
Properties of Metals and Alloys
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE