Accession Number : ADA310955

Title :   Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

Descriptive Note : Technical rept.,

Corporate Author : ARMY RESEARCH LAB FORT MONMOUTH NJ

Personal Author(s) : McLane, George F. ; Cooke, Paul ; Moerkirk, Robert P.

PDF Url : ADA310955

Report Date : MAY 1996

Pagination or Media Count : 15

Abstract : Magnetron reactive ion etching of GaAs and AlGaAs has been investigated in CH4/H2/Ar gas mixtures. Etch rate was determined as a function of gas composition, power density (0.4-1.0W/cm2), pressure (6-25 mTorr), and total flow rate (20-40 sccm). Hydrogen passivation effects of etched and rapid thermal annealed GaAs were studied for several anneal temperatures (3000C, 4000C).

Descriptors :   *ETCHING, THERMAL PROPERTIES, ANNEALING, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, REACTIVITIES, ION BEAMS, HYDROGEN, METHANE, ARGON, MAGNETRONS.

Subject Categories : Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE