Accession Number : ADA310955
Title : Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.
Descriptive Note : Technical rept.,
Corporate Author : ARMY RESEARCH LAB FORT MONMOUTH NJ
Personal Author(s) : McLane, George F. ; Cooke, Paul ; Moerkirk, Robert P.
PDF Url : ADA310955
Report Date : MAY 1996
Pagination or Media Count : 15
Abstract : Magnetron reactive ion etching of GaAs and AlGaAs has been investigated in CH4/H2/Ar gas mixtures. Etch rate was determined as a function of gas composition, power density (0.4-1.0W/cm2), pressure (6-25 mTorr), and total flow rate (20-40 sccm). Hydrogen passivation effects of etched and rapid thermal annealed GaAs were studied for several anneal temperatures (3000C, 4000C).
Descriptors : *ETCHING, THERMAL PROPERTIES, ANNEALING, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, REACTIVITIES, ION BEAMS, HYDROGEN, METHANE, ARGON, MAGNETRONS.
Subject Categories : Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE