Accession Number : ADA311174

Title :   Low Temperature Epitaxial Growth of Rare Earth Doped Si.

Descriptive Note : Final technical rept. 21 Aug 92-20 Jun 96,

Corporate Author : VERMONT UNIV BURLINGTON DEPT OF COMPUTER SCIENCE AND ELECTRICAL ENGINEERING

Personal Author(s) : Varhue, Walter

PDF Url : ADA311174

Report Date : 05 JUN 1996

Pagination or Media Count : 22

Abstract : Epitaxial Si films doped with high concentrations (10(exp 19)/cu cm) of the rare earth element Er have been deposited. The deposition technique used was low temperature plasma enhanced chemical vapor deposition with an electron cyclotron resonance source. The deposition temperatures were below 500 deg C to avoid formation of erbium silicide which is optically inactive. The growth process for undoped samples was developed to the point that good quality epitaxial material could be obtained on demand. Some work was done investigating the concept of limited epitaxial thickness. Four different metal organic Er precursors were tried and the greatest success was found determine (bis trimethyl silyl amido) Er (III). A designed experiment was performed to the most important process conditions required to maximize the photoluminescence emission. Reasonably intense photoluminescence emission has been obtained, comparable to the level obtained by other groups, yet no absolute intensity calibration is currently available. Chemical analysis of the films was performed with both SIMS and RBS. The films do contain some carbon contamination, but the current thinking that this acts to reduce the lattice constant in the vicinity of the optical center and reduces the creation of crystalline defects.

Descriptors :   *LOW TEMPERATURE, *EPITAXIAL GROWTH, *SILICON, *DOPING, *RARE EARTH ELEMENTS, *ERBIUM COMPOUNDS, EMISSION, SOURCES, OPTICAL PROPERTIES, THICKNESS, METHYL RADICALS, MATERIALS, PLASMAS(PHYSICS), CRYSTAL LATTICES, PHOTOLUMINESCENCE, INTENSITY, ORGANOMETALLIC COMPOUNDS, CHEMICAL VAPOR DEPOSITION, CARBON, ELECTRONS, CRYSTAL DEFECTS, SAMPLING, CALIBRATION, CONTAMINATION, CHEMICAL ANALYSIS, SILICIDES, CONCENTRATION(CHEMISTRY), ELECTRON PARAMAGNETIC RESONANCE, CYCLOTRON RESONANCE.

Subject Categories : Inorganic Chemistry
      Organic Chemistry
      Physical Chemistry
      Crystallography
      Atomic and Molecular Physics and Spectroscopy
      Thermodynamics

Distribution Statement : APPROVED FOR PUBLIC RELEASE