Accession Number : ADA311266
Title : Optoelectronic III-V Heterostructures by Gas-Source MBE.
Descriptive Note : Final rept. 1 Nov 92-30 Apr 96,
Corporate Author : COLORADO STATE UNIV FORT COLLINS DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Robinson, Gary Y.
PDF Url : ADA311266
Report Date : 30 APR 1996
Pagination or Media Count : 81
Abstract : The objective of this research program was to grow by molecular beam epitaxy (MBE) quantum well heterostructures of the alloy InGaAsP and related materials for use in high performance devices. The first task was to grow InGaAsP/GaAs and InGaAsP/InP structures for shallow quantum well (QW) optical modulators and other optoelectronics devices. The second task was to develop selective-area regrowth techniques for lateral definition of complex optoelectronic integrated devices. The method of growth was gas-source MBE, a technique which we have previously shown to produce high quality QW heterostructures containing alternating layers of III-V arsenide and phosphides.
Descriptors : *GASES, *GROUP III COMPOUNDS, *GROUP IV COMPOUNDS, *GROUP V COMPOUNDS, *MOLECULAR BEAM EPITAXY, SOURCES, OPTICAL PROPERTIES, INTEGRATED SYSTEMS, ELECTROOPTICS, LAYERS, QUANTUM WELLS, GALLIUM ARSENIDES, STRUCTURES, ALLOYS, BARRIERS, ARSENIDES, PHOSPHIDES, INDIUM, LIGHT MODULATORS, SHALLOW DEPTH, L BAND.
Subject Categories : Inorganic Chemistry
Properties of Metals and Alloys
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE