Accession Number : ADA311446
Title : Novel Crystal Growth of Wide Bandgap II-VI Compounds for Blue/Green Lasers by Molecular Beam Epitaxy.
Descriptive Note : Final rept. 1 Apr 92-31 Mar 95,
Corporate Author : COLUMBIA UNIV NEW YORK DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Wang, Wen I.
PDF Url : ADA311446
Report Date : 10 AUG 1995
Pagination or Media Count : 10
Abstract : P-type doping of ZnSe by nitrogen on off-axis substrate orientations resulted in carrier concentrations higher than that of the conventional (100) orientation. Low threshold current density lasers grown on (511)A operated at room temperatures have been achieved. Photoluminescence of (511) ZnMgSeS layers and CdZnSe quantum wells exhibited stronger luminescence intensity than the conventional (100) orientation, indicating that less defects were incorporated during crystal growth. Flip-chip transfer of ZnSeS/ZnSe/CdZnSe light-emitting diode films from GaAs substrates to Si substrates with improved quantum efficiencies was demonstrated.
Descriptors : *LASERS, *BROADBAND, *BLUE(COLOR), *CRYSTAL GROWTH, *GREEN(COLOR), *GROUP II-VI COMPOUNDS, *MOLECULAR BEAM EPITAXY, EMISSION, MAGNESIUM, QUANTUM WELLS, GALLIUM ARSENIDES, PHOTOLUMINESCENCE, LIGHT, FILMS, CURRENT DENSITY, CHARGE CARRIERS, ENERGY GAPS, SUBSTRATES, NITROGEN, ROOM TEMPERATURE, SILICON, QUANTUM EFFICIENCY, CADMIUM, DOPING, SULFUR, LIGHT EMITTING DIODES, P TYPE SEMICONDUCTORS, FLIP CHIPS, SELENIUM, ZINC SELENIDES.
Subject Categories : Inorganic Chemistry
Lasers and Masers
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE