Accession Number : ADA311665
Title : Si(1-x)Ge(x)/Si Heterostructures for Infrared Detection.
Descriptive Note : Final rept. Sep 93-Sep 95,
Corporate Author : PRINCETON UNIV NJ DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
Personal Author(s) : Storm, James C.
PDF Url : ADA311665
Report Date : JAN 1996
Pagination or Media Count : 33
Abstract : This report describes the development of Si/Si(1-x)Ge(x) heterostructures for platinum silicide Schottky barriers with a cutoff wavelength of 10 microns or longer. The details of the required conditions for the growth of these heterostructures by Rapid Thermal Chemical Vapor Deposition are first described, with particular attention paid to the growth temperature, germanium content, and doping. The experimental performance of PtSi Schottky barrier detector structures is then described. The cutoff wavelength can be extended to 10 micrometers as hoped but, in present devices, a reverse bias of several volts needed to achieve this long wavelength, with a larger parasitic barrier present at smaller biases. The models for this tunable barrier height are presented. It is concluded that a parasitic barrier at the lower SiGe/Si interface, coupled with a high n-type background doping, is probably responsible for extra barrier. The required conditions for eliminating this effect are described.
Descriptors : *INFRARED DETECTION, *SILICON, *SCHOTTKY BARRIER DEVICES, *GERMANIUM, *SILICIDES, *PLATINUM COMPOUNDS, THERMAL PROPERTIES, TEMPERATURE, DETECTORS, GROWTH(GENERAL), STRUCTURES, VOLTAGE, CHEMICAL VAPOR DEPOSITION, BARRIERS, TUNING, MOLECULAR STRUCTURE, DOPING, N TYPE SEMICONDUCTORS, LONG WAVELENGTHS, BIAS, HEIGHT.
Subject Categories : Inorganic Chemistry
Infrared Detection and Detectors
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE