Accession Number : ADA311700
Title : Interface Properties of Wide Bandgap Semiconductor Structures.
Descriptive Note : Semiannual technical rept. 1 Jan-30 Jun 96,
Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH
Personal Author(s) : Davis, Robert F. ; Bedair, S. ; Bernholc, J. ; Nemanich, R. J. ; Sitar, Z.
PDF Url : ADA311700
Report Date : JUN 1996
Pagination or Media Count : 172
Abstract : Nuclear transmutation of B to Li is being investigated for donor doping of diamond. Homoepitaxial (10)B enriched diamond films have been grown, characterized using Hall measurements and Raman and PL spectroscopies and neutron-irradiated at a dose of 3x10(exp 20)/sq cm. The field emission energy distribution was measured from a Mo field emitter before and after diamond coating. After coating, the Mo needle had a lower turn on voltage that WM attributed to the diamond crystals acting as micro-tips which enhanced the field. The turn on voltage further decreased after in vacuo annealing. Comparisons between the wetting characteristics of 6H-SiC(000l) sub si and Si(111) surfaces in various acids and bases were conducted. The 10:1 HF dipped Si(111) surfaces were hydrophobic; the (0001) sub si 6H-SiC surfaces were hydrophilic. Annealing of Si capped (0001 ) sub si 6H-SiC surfaces in UHV at 1100 deg C for 5 min. caused thermal desorption of the Si capping layer and the formation of (3 x 3) Si rich, oxygen free (0001) sub si 6H-SiC surfaces. p2
Descriptors : *INTERFACES, *STRUCTURES, *SEMICONDUCTORS, *LITHIUM, *BROADBAND, *BORON, *SILICON CARBIDES, MEASUREMENT, ANNEALING, LAYERS, HALL EFFECT, PHOTOLUMINESCENCE, VOLTAGE, DIAMONDS, ENERGY GAPS, EPITAXIAL GROWTH, MOLYBDENUM, CRYSTALS, OXYGEN, COATINGS, FIELD EMISSION, SURFACE PROPERTIES, ELECTRON DONORS, DOPING, EMITTERS, DESORPTION, RAMAN SPECTRA, THERMAL RADIATION, ACIDS, ULTRAHIGH VACUUM, BASES(CHEMISTRY), CAPPING, NUCLEAR TRANSMUTATION.
Subject Categories : Electrical and Electronic Equipment
Nuclear Physics & Elementary Particle Physics
Radiofrequency Wave Propagation
Distribution Statement : APPROVED FOR PUBLIC RELEASE