Accession Number : ADA312068
Title : Growth of Lattice Matched InA1N on ZnO by MOMBE.
Descriptive Note : Annual rept. 1 Jul 94-30 Jun 95,
Corporate Author : FLORIDA UNIV GAINESVILLE DEPT OF MATERIALS SCIENCE AND ENGINEERING
Personal Author(s) : Jones, Kevin S.
PDF Url : ADA312068
Report Date : 22 AUG 1995
Pagination or Media Count : 16
Abstract : Research Conducted in the last year has focussed on the preparation and cleaning of ZnO substrates and on the initial growth of InAlN by Metal Organic Molecular Beam Epitaxy (MOMBE). Significant improvement in surface morphology of the substrates has been verified by Atomic Force Microscopy (AFM). High resolution X-ray diffraction (HRXRD) has shown an improvement in the substrate quality as indicated by a very small full-width half-maximum (FWHM) for the ZnO peak. Annealing studies of the ZnO substrates revealed that no substantial loss of oxygen from the ZnO surface could be detected by Auger electron spectroscopy, nor could a change in surface morphology be found by AFM. Several InAlN samples have been grown on the ZnO substrates and have been analyzed by electron microprobe and powder X-ray diffraction to determine the ternary compositions. Thus far the nitride compositions are approaching the lattice matched composition of In.32SA10.675N and significant improvements in surface morphology have been achieved by varying traditional growth parameters.
Descriptors : *ORGANOMETALLIC COMPOUNDS, *EPITAXIAL GROWTH, *AUGER ELECTRON SPECTROSCOPY, *ZINC SELENIDES, *MOLECULAR BEAM EPITAXY, ANNEALING, PARAMETERS, POWDERS, GROWTH(GENERAL), MORPHOLOGY, X RAY DIFFRACTION, SUBSTRATES, LASERS, HIGH RESOLUTION, OXYGEN, QUALITY, SURFACE PROPERTIES, LOSSES, MICROPROBES, ELECTRON PROBES.
Subject Categories : Organic Chemistry
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE