Accession Number : ADA312620
Title : AlGaN Channel Transistors for Power Management and Distribution.
Descriptive Note : Progress rept. 30 Apr-31 May 96,
Corporate Author : SVT ASSOCIATES INC EDEN PRAIRIE MN
Personal Author(s) : Van Hove, James
PDF Url : ADA312620
Report Date : 05 JUN 1996
Pagination or Media Count : 5
Abstract : This report summarizes the first month on the SBIR Phase I program to develop AlGaN Channel JFETs. A mask set to fabricate nitride based JFETs was begun. IV curves of GaN PN junctions are shown. Measurements of the leakage of these junctions indicate that recessing the P layer routinely will require an etch stop to minimize the leakage current. Ni Au P type ohmics did not withstand 500 C anneals.
Descriptors : *NITRIDES, *ALUMINUM, *CHANNELS, *TRANSISTORS, *POWER DISTRIBUTION, MANAGEMENT, GALLIUM, ELECTRIC CURRENT, LEAKAGE(ELECTRICAL), MASKS.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Electric Power Production and Distribution
Distribution Statement : APPROVED FOR PUBLIC RELEASE