Accession Number : ADA313300
Title : Charge State of Ge-Related Point Defects in Oxidized SiGe Alloys.
Descriptive Note : Final rept. Apr 93-Mar 96,
Corporate Author : ALABAMA UNIV IN BIRMINGHAM
Personal Author(s) : Zvanut, M. E.
PDF Url : ADA313300
Report Date : AUG 1996
Pagination or Media Count : 5
Abstract : The first stage of this work focused on point defects in the oxide layer of oxidized SiGe alloys. An oxygen vacancy related defect, the Ge E' center, was found in oxides grown by thermal oxidation of SiGe. An annealing study showed that the center was unstable at temperatures just above room temperature (50 deg C). The results have been published in Applied Physics Letters 63, 3049 (1993) and, earlier, in a proceedings of the Materials Research Society (1992). The second part of the program addressed defects at the interface between SiGe and an overlying oxide. Both Si and Ge dangling bond centers, presumably resulting from dielectric-semiconductor mismatch, were shown to exist at the interface. The depth profile of the Ge center, which supports identification of this defect with an interface, was reported in a proceedings of the Materials Research Society (vol. 405, 1996). The significance of both the oxide and interfacial defects lies in their potential association with oxide hole traps and interface states, two entities which are known to hamper the success of pure Si-based devices. p1
Descriptors : *POINT DEFECTS, *OXIDES, *GERMANIUM ALLOYS, *SILICON ALLOYS, *ATOMIC CHARGE, ANNEALING, INTERFACES, LAYERS, MATERIALS, DIELECTRICS, HOLES(ELECTRON DEFICIENCIES), TRAPPING(CHARGED PARTICLES), SEMICONDUCTORS, ROOM TEMPERATURE, CHEMICAL BONDS, THERMOCHEMISTRY.
Subject Categories : Inorganic Chemistry
Properties of Metals and Alloys
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE