Accession Number : ADA313320

Title :   Developments in Transistor Infrared Detectors,

Corporate Author : NATIONAL AIR INTELLIGENCE CENTER WRIGHT-PATTERSON AFB OH

Personal Author(s) : Deping, Gao

PDF Url : ADA313320

Report Date : 24 JUL 1996

Pagination or Media Count : 18

Abstract : This article primarily introduces developmental trends in resistor infrared (IR) detector technology which includes HgCdTe optoelectronic diodes, Shottky-barrier light emitters, and GaAs/AlGaAs inter sub-band quantum trap optoelectronic conductors. The development of these IR devices are aimed at improving element and component capability, the manufacture of large electronic sweep arrays, increasing operational temperatures, reducing cost and making application easier. In addition, this article also compares the capabilities of different models of HgCdTe devices.

Descriptors :   *INFRARED DETECTORS, *MERCURY CADMIUM TELLURIDES, *TRANSISTORS, DIODES, TEMPERATURE, ELECTROOPTICS, MODELS, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, COSTS, TRANSLATIONS, INFRARED RADIATION, SCHOTTKY BARRIER DEVICES, CHINA, LIGHT EMITTING DIODES, RESISTORS.

Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Infrared Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE