Accession Number : ADA313452

Title :   Equipment for Selected Energy Epitaxial Deposition (SEED).

Descriptive Note : Final rept. 1 Feb 95-30 Apr 96,

Corporate Author : ARIZONA STATE UNIV TEMPE

Personal Author(s) : Tsong, I. S. ; Bauer, E. ; Doak, R. B.

PDF Url : ADA313452

Report Date : AUG 1996

Pagination or Media Count : 12

Abstract : We have constructed two Selected Energy Epitaxial Deposition (SEED) systems for the growth of wide bandgap semiconductors, specifically GaN and SiC. The first system is a seeded beam supersonic free-jet (SSJ) which will eventually be interfaced directly to our existing low-energy electron microscope (LEEM) to conduct in situ observations of the growth of epitaxial layers of GaN in real time. A beam intensity of 2 x 10 to the 19th power atoms/srrad/sec is obtained with a 500 sccm flow in the SSJ. With the beam seeded with 10% NH3 and a nozzle to substrate distance of 50 cm, this intensity corresponds to 1 x 10 to the 15th power molecules/cm squared/sec. The second instrument is a dual Colutron deposition system to provide mass-separated monoenergetic ion beams in the 5-20 eV range for direct ion-beam deposition. This involves the modification of our two existing Colutron ion-beam systems originally designed for low-energy ion-scattering spectrometry. The completed Colutron deposition system has been tested to produce an Ar+ ion beam at 20 eV with FWHM of 3 eV and an ion current density of minus 10 to the 12th power cm to the minus 2nd power s to the minus 1 power,

Descriptors :   *EPITAXIAL GROWTH, *SEMICONDUCTORS, *DEPOSITION, IONS, SCATTERING, REAL TIME, LAYERS, ELECTRON MICROSCOPES, ENERGY, INTENSITY, ENERGY GAPS, SPECTROMETRY, SUBSTRATES, ION BEAMS, LOW ENERGY, BROADBAND, INSTRUMENTATION, RANGE(DISTANCE), SILICON CARBIDES, GALLIUM COMPOUNDS, ION DENSITY, IONIC CURRENT, NITROGEN COMPOUNDS.

Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE