Accession Number : ADA313497
Title : Simulation of Double Barrier Resonant Tunneling Diodes.
Descriptive Note : Master's thesis,
Corporate Author : NAVAL POSTGRADUATE SCHOOL MONTEREY CA
Personal Author(s) : Porter, Roy M.
PDF Url : ADA313497
Report Date : JUN 1996
Pagination or Media Count : 43
Abstract : The double barrier resonant tunneling diode (DBRTD) is one of several devices currently being considered by the semiconductor industry as a replacement for conventional very large scale integrated (VLSI) circuit technology when the latter reaches its currently perceived scaling limits. The DBRTD was one of the first and remains one of the most promising devices to exhibit a room temperature negative differential resistance (NDR); this non-linear device characteristic has innovative circuit applications that will enable further downsizing. Due to the expense of fabricating such devices, however, it is necessary to extensively model them prior to fabrication and testing. Two techniques for modeling these devices are discussed, the Thomas-Fermi and Poisson-Schroedinger theories. The two techniques are then compared using a model currently under development by Texas Instruments, Incorporated.
Descriptors : *TUNNELING(ELECTRONICS), *MODEL THEORY, *REPLACEMENT, *TUNNEL DIODES, SIMULATION, INDUSTRIES, MICROPROCESSORS, ELECTRON TRANSPORT, HETEROJUNCTIONS, THESES, VERY LARGE SCALE INTEGRATION, SEMICONDUCTORS, COSTS, NONLINEAR SYSTEMS, LIMITATIONS, RESONANCE, SCALING FACTOR, BARRIERS, CIRCUITS, TEXAS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE