Accession Number : ADA313564
Title : On the Different Physical Roles of Hysteresis and Intrinsic Oscillations in Resonant Tunneling Structures.
Descriptive Note : Technical rept.,
Corporate Author : ARMY RESEARCH LAB FORT MONMOUTH NJ
Personal Author(s) : Woolard, Dwight L. ; Buot, Felix A. ; Rhodes, David L. ; Lu, Xiaojia ; Lux, Robert A.
PDF Url : ADA313564
Report Date : AUG 1996
Pagination or Media Count : 44
Abstract : Electronic sources based upon resonant tunneling diodes (RTDs) usually generate power by establishing limit cycles which exchange energy with storage elements in an external biasing circuit; hence, the output power in this type of implementation will always be limited by extrinsic effects. We verify the presence of multiple energy storage mechanisms solely within the RTD and characterize the interdependencies necessary to induce intrinsic oscillations observed in quantum mechanical simulations. Specifically, we show that a nonlinear 'access' resistance and quantum well inductance is responsible for the hysteresis, 'plateaulike' behavior, and bistability associated with the intrinsic current voltage (I-V) characteristic. Furthermore, a new circuit level representative which accurately incorporates the nonlinear dependencies into these heretofore 'linear' equivalent circuit elements is used to demonstrate the different roles, as well as the degree of cooperative interplay, of the intrinsic oscillations and hysteresis in determining the overall I-V characteristics of the RTD.
Descriptors : *TUNNELING(ELECTRONICS), *QUANTUM ELECTRONICS, *EQUIVALENT CIRCUITS, RESISTANCE, SEMICONDUCTOR DIODES, NONLINEAR SYSTEMS, RESONANCE, ACCESS, POWER, BIAS, EXCHANGE, ENERGY STORAGE, INDUCTANCE, HYSTERESIS, BISTABLE DEVICES.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE