Accession Number : ADA313695
Title : Diamond Deposition by Controlled Nucleation and Growth.
Descriptive Note : Final rept. Apr 91-Sep 94,
Corporate Author : AUBURN UNIV AL
Personal Author(s) : Tzeng, Y.
PDF Url : ADA313695
Report Date : 25 MAY 1996
Pagination or Media Count : 45
Abstract : Nucleation and growth of diamond were studied using microwave plasma, hot filament, and oxy-acetylene flame assisted CVD techniques. High quality as indicated by IR absorption and Raman spectra,diamond was achieved for optical applications. Sequential deposition and etching was applied to achieve high growth rate while maintaining good diamond quality. By the use of a high power density microwave plasma high rate, up to 50 micrometers/h, growth of diamond was achieved in a broad range of substrate temperature up to 1500C and methane concentration near 100%. RF plasma induced negative bias was applied to achieve high density diamond nucleation on electrically insulating optical windows such as sapphire.
Descriptors : *CONTROL, *GROWTH(GENERAL), *DIAMONDS, *NUCLEATION, *DEPOSITION, OPTICAL EQUIPMENT, OPTICAL PROPERTIES, TEMPERATURE, INSULATION, PLASMAS(PHYSICS), CHEMICAL VAPOR DEPOSITION, MICROWAVES, SUBSTRATES, ETCHING, ELECTRICAL PROPERTIES, SEQUENCES, OXYGEN, SAPPHIRE, HIGH DENSITY, ACETYLENE, FILAMENTS, ABSORPTION, FLAMES, METHANE, INFRARED SPECTRA.
Subject Categories : Inorganic Chemistry
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE