Accession Number : ADA313727

Title :   Parallel Molecular Nanofabrication.

Descriptive Note : Final rept. 1 Jul 93-30 Jun 96,

Corporate Author : COLORADO UNIV AT BOULDER DEPT OF PHYSICS

Personal Author(s) : Douglas, Kenneth

PDF Url : ADA313727

Report Date : 20 AUG 1996

Pagination or Media Count : 7

Abstract : Low energy electron enhanced etching (LE4) has been used to transfer a triangular lattice of 10 nm diameter holes, with lattice constant 22 nm, into (100) silicon with minimal etch damage to the silicon lattice. Fabrication of the hole pattern is guided by a protein crystal template. The periodically heterogeneous surface chemistry of the nanopatterned silicon facilitates the self-aggregation of an electron beam-deposited titanium film to form an ordered array of metal nanoclusters. The titanium aggregates are positioned in register at the LE4-determined hole sites.

Descriptors :   *FABRICATION, *SURFACE CHEMISTRY, *PARALLEL ORIENTATION, *MOLECULAR ELECTRONICS, DAMAGE, PROTEINS, CRYSTALS, ETCHING, ELECTRON ENERGY, AGGREGATES(MATERIALS), LOW ENERGY, SILICON, TEMPLATES, HETEROGENEITY, TITANIUM.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Laminates and Composite Materials
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE