Accession Number : ADA313794
Title : Nanofabrication and High-Speed, Nanoscale, Electronic and Optoelectronic Devices.
Descriptive Note : Final rept.,
Corporate Author : MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Chou, Stephen Y.
PDF Url : ADA313794
Report Date : 23 AUG 1996
Pagination or Media Count : 7
Abstract : The research project has achieved six significant results: (1) fabrication of 10 nm Si pillars array and the first observation of photoluminescence from the Si pillar array fabricated by nanolithography; (2) a new MSM photodetector structure that can achieve 140 GHz in Si -- the fastest photodetectors in crystal Si. (3) proposal and demonstration of a new planar field-induced quantum dot transistor, and observation of interplay of quantum effects and Coulomb effects; (4) the first observation of bias-induced resonant tunneling peak splitting in a quantum dot; (5) demonstration of a new quantum wave bandstop filters, and (6) demonstration of silicon single electron and single Hole Quantum-dot transistors that have operation temperature above 100K.
Descriptors : *SILICON, *SOLID STATE ELECTRONICS, *NANOTECHNOLOGY, ELECTROOPTICS, PHOTOLUMINESCENCE, TUNNELING(ELECTRONICS), ARRAYS, LITHOGRAPHY, QUANTUM ELECTRONICS, PHOTODETECTORS, TRANSISTORS, BANDSTOP FILTERS.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE