Accession Number : ADA314232
Title : Hot Hole Relaxation in the SiGe System,
Corporate Author : MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
Personal Author(s) : Yeom, K. ; Hinckley, J. M. ; Singh, J.
PDF Url : ADA314232
Report Date : 01 MAR 1996
Pagination or Media Count : 4
Abstract : A general formalism is presented to study hot carrier relaxation in the valence band of strained and unstrained semiconductors. The approach is based on a six-band k description of the valence band and an anisotropic Monte Carlo method. We show the results of our studies for the Si-Ge system. Carriers are initially injected in the split-off band and the carrier distribution is followed in time. Results are presented for energy-dependent energy relaxation time. The relaxation times for Si are about 10(exp -13) s while those for Ge are an order of magnitude higher. To study the effect of biaxial strain produced through epitaxy on energy relaxation times we present results for Si(0.8)Ge(0.2) on a (100) silicon substrate. This work is of relevance to the interpretation of pump-probe experiments, which are primarily dependent on the relaxation of the average of the carrier energy.
Descriptors : *HOLES(ELECTRON DEFICIENCIES), *SEMICONDUCTORS, *SILICON, *RELAXATION, *GERMANIUM, REPRINTS, CHARGE CARRIERS, SUBSTRATES, LASERS, MONTE CARLO METHOD, HIGH ENERGY, VALENCE BANDS, ANISOTROPY.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Electricity and Magnetism
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE