Accession Number : ADA314232

Title :   Hot Hole Relaxation in the SiGe System,

Corporate Author : MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s) : Yeom, K. ; Hinckley, J. M. ; Singh, J.

PDF Url : ADA314232

Report Date : 01 MAR 1996

Pagination or Media Count : 4

Abstract : A general formalism is presented to study hot carrier relaxation in the valence band of strained and unstrained semiconductors. The approach is based on a six-band k description of the valence band and an anisotropic Monte Carlo method. We show the results of our studies for the Si-Ge system. Carriers are initially injected in the split-off band and the carrier distribution is followed in time. Results are presented for energy-dependent energy relaxation time. The relaxation times for Si are about 10(exp -13) s while those for Ge are an order of magnitude higher. To study the effect of biaxial strain produced through epitaxy on energy relaxation times we present results for Si(0.8)Ge(0.2) on a (100) silicon substrate. This work is of relevance to the interpretation of pump-probe experiments, which are primarily dependent on the relaxation of the average of the carrier energy.

Descriptors :   *HOLES(ELECTRON DEFICIENCIES), *SEMICONDUCTORS, *SILICON, *RELAXATION, *GERMANIUM, REPRINTS, CHARGE CARRIERS, SUBSTRATES, LASERS, MONTE CARLO METHOD, HIGH ENERGY, VALENCE BANDS, ANISOTROPY.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Electrical and Electronic Equipment
      Electricity and Magnetism
      Atomic and Molecular Physics and Spectroscopy

Distribution Statement : APPROVED FOR PUBLIC RELEASE