Accession Number : ADA314398
Title : Quantum Transport: Silicon Inversion Layers and InAlAs-InGaAs Heterostructures,
Corporate Author : ARIZONA STATE UNIV TEMPE CENTER FOR SOLID STATE ELECTRONICS RESEARCH
Personal Author(s) : Vasileska, D. ; Eldridge, T. ; Terry, D. K.
PDF Url : ADA314398
Report Date : 11 SEP 1996
Pagination or Media Count : 9
Abstract : Using a real-time Green's functions formalism, we investigate the influence of depletion charge scattering on the room temperature mobility in scaled silicon metal-oxide-semiconductor field-effect transistors and low-temperature transport in In(0.4)Al(0.6)As-In(0.4)Ga(0.6)As modulation doped heterostructures. Our simulation results suggest that depletion charge scattering, which is usually ignored, has considerable impact on the electron transport in silicon inversion layers near the threshold gate voltage, even at room temperature. We also find that the weighting coefficients a and b (for the inversion and depletion charge densities) strongly depend on the substrate doping and deviate from that reported in the literature. In the case of modulation doped heterostructures, the low-temperature mobility is limited by alloy and Coulomb scattering. Intersubband scattering considerably affects the broadening of the states which, in turn, leads to mobility reduction.
Descriptors : *LAYERS, *QUANTUM THEORY, *ELECTRON TRANSPORT, *GALLIUM ARSENIDES, *SILICON, *INVERSION, *ALUMINUM ARSENIDES, *INDIUM, SIMULATION, METALS, REPRINTS, SCATTERING, LOW TEMPERATURE, REAL TIME, THRESHOLD EFFECTS, GATES(CIRCUITS), VOLTAGE, SUBSTRATES, FIELD EFFECT TRANSISTORS, SEMICONDUCTORS, ALLOYS, ROOM TEMPERATURE, REDUCTION, WEIGHTING FUNCTIONS, OXIDES, DOPING, CHARGE DENSITY, GREENS FUNCTIONS, ELECTRON MOBILITY.
Subject Categories : Physical Chemistry
Electrical and Electronic Equipment
Electricity and Magnetism
Quantum Theory and Relativity
Distribution Statement : APPROVED FOR PUBLIC RELEASE