Accession Number : ADA315160

Title :   Power Recovery of Radiation Damaged MOCVD Grown Indium Phosphide on Silicon Solar Cells Through Argon-Ion Laser Annealing.

Descriptive Note : Master's thesis,

Corporate Author : NAVAL POSTGRADUATE SCHOOL MONTEREY CA

Personal Author(s) : Boyer, Lynn L., IV

PDF Url : ADA315160

Report Date : JUN 1996

Pagination or Media Count : 149

Abstract : This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide on silicon MOCVD grown solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a large forward-biased current. The InP/Si cells were irradiated with 1 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate four cells with an irradiance of 2.5 W/sq cm, producing a current density 3 to 5 times larger than AMO conditions. Cells were annealed at 19 deg C with the laser and at 25 deg C under AMO conditions. Annealing under laser illumination of n/p-type cells resulted in recovery of 48%. P/n type cells lost 4 to 12% of the assumed degradaton. Annealing under AMO conditions resulted in power recovery of 70% in n/p type cells. P/n-type cells recovered approximately 16% of lost power. Results indicate that significant power recovery results from the annealing of defects within n/p type InP/Si solar cells.

Descriptors :   *IONS, *METALS, *RADIATION, *ANNEALING, *RECOVERY, *SOLAR CELLS, *SILICON, *POWER, *INDIUM PHOSPHIDES, *ARGON LASERS, DAMAGE, DEGRADATION, SITES, THESES, CHEMICAL VAPOR DEPOSITION, ILLUMINATION, DEFECTS(MATERIALS), LASER APPLICATIONS, ORGANIC COMPOUNDS, N TYPE SEMICONDUCTORS, P TYPE SEMICONDUCTORS, CONTINUOUS WAVE LASERS.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Lasers and Masers
      Electric Power Production and Distribution

Distribution Statement : APPROVED FOR PUBLIC RELEASE