Accession Number : ADA315160
Title : Power Recovery of Radiation Damaged MOCVD Grown Indium Phosphide on Silicon Solar Cells Through Argon-Ion Laser Annealing.
Descriptive Note : Master's thesis,
Corporate Author : NAVAL POSTGRADUATE SCHOOL MONTEREY CA
Personal Author(s) : Boyer, Lynn L., IV
PDF Url : ADA315160
Report Date : JUN 1996
Pagination or Media Count : 149
Abstract : This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide on silicon MOCVD grown solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a large forward-biased current. The InP/Si cells were irradiated with 1 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate four cells with an irradiance of 2.5 W/sq cm, producing a current density 3 to 5 times larger than AMO conditions. Cells were annealed at 19 deg C with the laser and at 25 deg C under AMO conditions. Annealing under laser illumination of n/p-type cells resulted in recovery of 48%. P/n type cells lost 4 to 12% of the assumed degradaton. Annealing under AMO conditions resulted in power recovery of 70% in n/p type cells. P/n-type cells recovered approximately 16% of lost power. Results indicate that significant power recovery results from the annealing of defects within n/p type InP/Si solar cells.
Descriptors : *IONS, *METALS, *RADIATION, *ANNEALING, *RECOVERY, *SOLAR CELLS, *SILICON, *POWER, *INDIUM PHOSPHIDES, *ARGON LASERS, DAMAGE, DEGRADATION, SITES, THESES, CHEMICAL VAPOR DEPOSITION, ILLUMINATION, DEFECTS(MATERIALS), LASER APPLICATIONS, ORGANIC COMPOUNDS, N TYPE SEMICONDUCTORS, P TYPE SEMICONDUCTORS, CONTINUOUS WAVE LASERS.
Subject Categories : Inorganic Chemistry
Lasers and Masers
Electric Power Production and Distribution
Distribution Statement : APPROVED FOR PUBLIC RELEASE