Accession Number : ADA315346
Title : Growth, Characterization and Device Development in Monocrystalline Diamond Films.
Descriptive Note : Quarterly technical rept. 1 Jul-30 Sep 96,
Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH
Personal Author(s) : Davis, R. F. ; Nemanich, R. J. ; Sitar, Z. ; McClure, M. T. ; Schlesser, R.
PDF Url : ADA315346
Report Date : 30 SEP 1996
Pagination or Media Count : 17
Abstract : Nitrogen(N)-doped diamond(C) thin films were grown on Si(100) substrates using N/C gas ratios from 0 to 1:1, microwave plasma CVD and a three-step growth process involving biased enhanced nucleation (BEN). Micro-Raman spectra indicated that the film quality degraded with increasing N. The PL luminescence intensity increased with higher N/C ratios. UPS spectra indicated that thin N-doped films with N/C= 1:5 exhibited an NEA surface. Field emission energy distribution (FEED) measurements were performed on diamond-coated Mo tips under ultra high vacuum conditions to investigate the origin of field emitted electrons. Mo emitters were prepared by electrochemical etching and were subsequently coated with diamond powder by a dielectrophoretic procedure. Field emission energy spectra were taken on the same samples before and after diamond coating. In vacuo thermal annealing of coated samples was essential to obtain stable field emission. Field emission energy distribution data indicate that the field emission current originated from the diamond/vacuum interface, and that electrons were emitted from the conduction band minimum of diamond.
Descriptors : *THIN FILMS, *DIAMONDS, *SINGLE CRYSTALS, *SEMICONDUCTING FILMS, HIGH POWER, RATIOS, ANNEALING, STABILITY, HIGH FREQUENCY, INTERFACES, POWDERS, PLASMAS(PHYSICS), RAMAN SPECTROSCOPY, ENERGY, INTENSITY, ELECTROCHEMISTRY, MICROWAVES, NUCLEATION, ETCHING, GASES, COATINGS, ELECTRONS, FIELD EMISSION, SPECTRA, ELECTRON EMISSION, SAMPLING, CONDUCTION BANDS, LUMINESCENCE, THERMAL RADIATION, TRANSISTORS, ULTRAHIGH VACUUM.
Subject Categories : Crystallography
Plasma Physics and Magnetohydrodynamics
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE