Accession Number : ADA315410

Title :   Wavelength Tuning in Real-Time, In Situ Analysis of Thin Film Epitaxy.

Descriptive Note : Final rept. 7 Jun 95-6 Jun 96,

Corporate Author : CORNELL UNIV ITHACA NY LAB OF ATOMIC AND SOLID STATE PHYSICS

Personal Author(s) : Ho, Wilson

PDF Url : ADA315410

Report Date : 07 OCT 1996

Pagination or Media Count : 11

Abstract : This project involves the acquisition and fabrication of instrumentation which combines a broadly tunable all-solid state laser, based on the optical parametric oscillator (OPO), with a photoelectron emission microscope (PEEM). The femtosecond laser system provides output wavelengths in the range 750 - 850 nm, 990 - 1150 nm, 2300 - 5200 nm, and the second, third, and fourth harmonics. Thus a very broad range of wavelengths from the deep UV to the mid-IR is available: 190 nm - 5200 nm. The OPO is homemade and is pumped by a Ti:sapphire laser. The PEEM spectrometer is also homemade and is coupled directly to the laser system for two-photon photoemission experiments. The broad wavelength tunability of the laser system is also being applied to resonant second harmonic generation and sum frequency generation experiments. The ultrashort time duration of the laser pulses (60 - 90 fs) can be used to follow time-dependent processes. The instruments are designed to provide real-time, in situ analysis of thin film epitaxy, especially the wide band gap semiconductors: GaN, AIN, and SiC.

Descriptors :   *TUNABLE LASERS, *EPITAXIAL GROWTH, *CRYSTAL OSCILLATORS, SOLID STATE LASERS, SECOND HARMONIC GENERATION, THIN FILMS, PULSED LASERS, SAPPHIRE, PHOTOELECTRIC EMISSION, RESONANCE, TUNING, SHORT PULSES, SPECTROMETERS.

Subject Categories : Lasers and Masers
      Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE