Accession Number : ADA316439

Title :   Heteroepitaxy of Ternary SiGeC Alloys on Si for Bipolar Transistors.

Descriptive Note : Final rept. 1 May 93-30 Apr 96,

Corporate Author : ARIZONA STATE UNIV TEMPE CENTER FOR SOLID STATE SCIENCE

Personal Author(s) : Mayer, James W.

PDF Url : ADA316439

Report Date : 31 JUL 1996

Pagination or Media Count : 9

Abstract : This project utilized a variety of experimental methods to produce thin films of SiGeC on Si for the purpose of creating a heteroepitaxial layer with a different energy bandgap on the substrate Si for applications to bipolar transistors. Growth was performed by combined ion and molecular beam deposition, by CVD and by C ion implantation. Up to 3 atomic percent C was successfully incorporated. Theoretical and experimental bandgaps decreased with increasing C content for up to 1.5 percent C.

Descriptors :   *EPITAXIAL GROWTH, *HETEROGENEITY, *BIPOLAR TRANSISTORS, *SILICON ALLOYS, LAYERS, THIN FILMS, CHEMICAL VAPOR DEPOSITION, SUBSTRATES, ALLOYS, ION IMPLANTATION, MOLECULAR BEAMS, TERNARY COMPOUNDS, GERMANIUM ALLOYS, CARBON ALLOYS.

Subject Categories : Electrical and Electronic Equipment
      Inorganic Chemistry
      Physical Chemistry
      Properties of Metals and Alloys
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE