Accession Number : ADA316439
Title : Heteroepitaxy of Ternary SiGeC Alloys on Si for Bipolar Transistors.
Descriptive Note : Final rept. 1 May 93-30 Apr 96,
Corporate Author : ARIZONA STATE UNIV TEMPE CENTER FOR SOLID STATE SCIENCE
Personal Author(s) : Mayer, James W.
PDF Url : ADA316439
Report Date : 31 JUL 1996
Pagination or Media Count : 9
Abstract : This project utilized a variety of experimental methods to produce thin films of SiGeC on Si for the purpose of creating a heteroepitaxial layer with a different energy bandgap on the substrate Si for applications to bipolar transistors. Growth was performed by combined ion and molecular beam deposition, by CVD and by C ion implantation. Up to 3 atomic percent C was successfully incorporated. Theoretical and experimental bandgaps decreased with increasing C content for up to 1.5 percent C.
Descriptors : *EPITAXIAL GROWTH, *HETEROGENEITY, *BIPOLAR TRANSISTORS, *SILICON ALLOYS, LAYERS, THIN FILMS, CHEMICAL VAPOR DEPOSITION, SUBSTRATES, ALLOYS, ION IMPLANTATION, MOLECULAR BEAMS, TERNARY COMPOUNDS, GERMANIUM ALLOYS, CARBON ALLOYS.
Subject Categories : Electrical and Electronic Equipment
Properties of Metals and Alloys
Distribution Statement : APPROVED FOR PUBLIC RELEASE