Accession Number : ADA317004
Title : Strain-Induced Polarization Effects for III-V Heterostructure Device Applications.
Descriptive Note : Final rept. 1 Apr 92-30 Jun 96,
Corporate Author : MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Ruden, P. P. ; Nathan, Marshal I.
PDF Url : ADA317004
Report Date : 28 AUG 1996
Pagination or Media Count : 8
Abstract : The effects of externally applied uniaxial stresses on 111-V double barrier resonant tunneling devices was studied experimentally and theoretically. Devices were fabricated on (001)- and (1 1 1)- oriented substrates and subjected to stresses in the plane and perpendicular to the plane of the wafer. The current vs. voltage characteristics of these devices were calculated in the framework of a model that takes into account stress effects on the bandstructure as well as piezoelectric effects. Good qualitative agreement between the experimental and theoretical results was achieved.
Descriptors : *POLARIZATION, *PIEZOELECTRIC MATERIALS, STRESSES, ELECTRIC FIELDS, SUBSTRATES, STRAIN(MECHANICS), AXES, HETEROGENEITY, POLARIZING FILTERS.
Subject Categories : Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE