Accession Number : ADA317075
Title : High Density Low Power RTD/HBT and RTD/HFET Technologies for High Speed Computing.
Descriptive Note : Final rept. 15 Sep 93-30 Apr 96,
Corporate Author : ROCKWELL INTERNATIONAL THOUSAND OAKS CA SCIENCE CENTER
Personal Author(s) : Wang, K. C.
PDF Url : ADA317075
Report Date : OCT 1996
Pagination or Media Count : 66
Abstract : This program is directed towards the monolithic integration of resonant tunneling diodes (RTDs) and conventional heterostructure transistors, and the demonstration of high speed, low power, high functional-density circuits. This effort was carried out in close collaboration with MIT Lincoln Laboratory (LL). This team demonstrated lattice mismatched InGaAs/AlAs RTDs with high peak to valley current ratio (PVCR) and high current density capability, integrated with AlGaAs/Ga-As-based heterojunction bipolar transistors (HBTs) and hetero-structure field effect transistors (HFETs). We explored by simulation and experiment several novel digital integrated circuit approaches, based on this technology.
Descriptors : *LOW POWER, *TUNNELING(ELECTRONICS), *SEMICONDUCTOR DIODES, *HIGH DENSITY, HIGH POWER, SIMULATION, DIGITAL SYSTEMS, PEAK VALUES, RATIOS, LESSONS LEARNED, DEMONSTRATIONS, INTEGRATED CIRCUITS, FIELD EFFECT TRANSISTORS, RESONANCE, HETEROGENEITY, MONOLITHIC STRUCTURES(ELECTRONICS), TRANSISTORS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE